1 GB/T 249-1989 半導(dǎo)體分立器件型號(hào)命名方法

The rule of type designation for discrete semiconductor devices

2 GB/T 4024-1983 半導(dǎo)體器件反向阻斷三極晶閘管的測(cè)試方法

Measuring methods for semiconductor device--Reverse blocking triode thyratron

3 GB/T 4586-1994 半導(dǎo)體器件 分立器件 第8部分: 場(chǎng)效應(yīng)晶體管

Semiconductor devices--Discrete devices--Part 8: Field-effect transistors

4 GB/T 4587-1994 半導(dǎo)體分立器件和集成電路 第7部分: 雙極型晶體管

Semiconductor discrete devices and integrated circuits--Part 7: Bipolar transistors

5 GB/T 4589.1-1989 半導(dǎo)體器件 分立器件和集成電路總規(guī)范 （可供認(rèn)證用）

Semiconductor devices-Generic specification for discrete devices and  

integrated circuits

6 GB/T 4619-1996 液晶顯示器件測(cè)試方法

Measuring methods for liquid crystal display devices

7 GB/T 4654-1984 碳化硅、鋯英砂、陶瓷類(lèi)紅外輻射加熱器通用技術(shù)條件

The general technical specifications on silicon carbide and zircon  

ceramic infrared heater

8 GB/T 4799-1984 氣體激光器型號(hào)命名方法

The denominating method of type for gas lasers

9 GB/T 4931-1985 氦氖激光器系列型譜

The series and type spectrum for helium neon lasers

10 GB/T 4932-1985 二氧化碳激光器系列型譜

The series and type spectrum for carbon dioxide lasers

11 GB/T 4937-1995 半導(dǎo)體器件機(jī)械和氣候試驗(yàn)方法

Mechanical and climatic test methods for semiconductor devices

12 GB/T 4938-1985 半導(dǎo)體分立器件接收和可靠性

Acceptance and reliability for discrete semiconductor devices

13 GB/T 4939-1985 普通整流管

Rectifier diodes for general purpose

14 GB/T 4940-1985 普通晶閘管

Triode thyristors for general purpose

15 GB/T 6218-1996 開(kāi)關(guān)用雙極型晶體管空白詳細(xì)規(guī)范

Blank detail specification for bipolar transistors for switching applications

16 GB/T 6256-1986 工業(yè)加熱三極管空白詳細(xì)規(guī)范 （可供認(rèn)證用）

Blank detail specification for industrial heating triodes

17 GB/T 6570-1986 微波二極管測(cè)試方法

Measuring methods for microwave diodes

18 GB/T 6571-1995 半導(dǎo)體器件 分立器件 第3部分:信號(hào)（包括開(kāi)關(guān)）和調(diào)整二極管

Semiconductor devices--Discrete devices--Part 3: Signal（including switching）and regulator diodes

19 GB/T 6588-1986 通用信號(hào)和（或）開(kāi)關(guān)半導(dǎo)體二極管空白詳細(xì)規(guī)范 （可供認(rèn)證用）

Blank detail specification for general purpose signal and/or switching

semiconductor diodes

 20 GB/T 6589-1986 電壓調(diào)整和電壓基準(zhǔn)二極管 （包括溫度補(bǔ)嘗精密基準(zhǔn)二極管）  

空白詳細(xì)規(guī)范 （可供認(rèn)證用）

Blank detail specification for volt age regulator diodes and voltage  

reference diodes， excluding temperature compensated precision reference

diodes

21 GB/T 7577-1996 低頻放大管殼額定的雙極型晶體管空白詳細(xì)規(guī)范

Blank detail specification for case-rated bipolar transistors for

low-frequency amplification

22 GB/T 7581-1987 半導(dǎo)體分立器件外形尺寸

Dimensions of outlines for semiconductor discrete devices

23 GB/T 9436-1988 液晶顯示器件參數(shù)符號(hào)

Letter symbols of parameter for liquid crystal display devices

24 GB/T 11153-1989 激光小功率計(jì)性能檢測(cè)方法

Parameters testing method of laser power meter in low range

25 GB/T 12300-1990 功率晶體管安全工作區(qū)測(cè)試方法

Test methods of safe operating area for power transistors

26 GB/T 12560-1990 半導(dǎo)體器件 分立器件分規(guī)范 （可供認(rèn)證用）

Semiconductor devices-Sectional specification for discrete devices

27 GB/T 12561-1990 發(fā)光二極管空白詳細(xì)規(guī)范 （可供認(rèn)證用）

Blank detail specification for light emitting diodes

28 GB/T 12562-1990 PIN 二極管空白詳細(xì)規(guī)范 （可供認(rèn)證用）

Blank detail specification for PIN diodes

29 GB/T 12848-1991 扭曲向列型液晶顯示器件總規(guī)范 （可供認(rèn)證用）

Generic specification of twisted nematic liquid crystal display devices

30 GB/T 12849-1991 鐘、表用扭曲向列型液晶顯示器件空白詳細(xì)規(guī)范

（可供認(rèn)證用）

Blank detail specification of twisted nematic liquid crystal

displays for watches

31 GB/T 12850-1991 計(jì)算器用扭曲向列型液晶顯示器件空白詳細(xì)規(guī)范

（可供認(rèn)證用）

Blank detail specification of twisted nematic liquid crystal displays

for calculators

32 GB/T 12851-1991 儀器、儀表用扭曲向列型液晶顯示器件空白詳細(xì)規(guī)范

（可供認(rèn)證用）

Blank detail specification of twisted nematic liquid crystal displays

for instruments

33 GB/T 13063-1991 電流調(diào)整和電流基準(zhǔn)二極管空白詳細(xì)規(guī)范

Blank detail specification for current-regulator and current-reference

diodes 34 GB/T 13066-1991 單結(jié)晶體管空白詳細(xì)規(guī)范

Blank detail specification for unijunction transistors

35 GB/T 14078-1993 氦氖激光器技術(shù)條件

He-Ne laser specification

36 GB/T 14116-1993 彩色液晶顯示器件的光度和色度的測(cè)試方法

Photomentric and colorimetric methods of measurement of color liquid

crystal displays

37 GB/T 14117-1993 彩色液晶顯示器件空白詳細(xì)規(guī)范 （可供認(rèn)證用）

Blank detail specification of color liquid crystal displays

38 GB/T 14863-1993 用柵控和非柵控二極管的電壓-電容關(guān)系測(cè)定硅外延層

中凈載流子濃度的標(biāo)準(zhǔn)方法

Standard test method for net carrier density in silicon epitaxial layers by  

voltage-capacitance of gated and ungated diodes

39 GB/T 15137-1994 體效應(yīng)二極管空白詳細(xì)規(guī)范

Blank detail specification for gunn diodes

40 GB/T 15167-1994 半導(dǎo)體激光光源總規(guī)范

General specification for light source of semiconductor lasers

41 GB/T 15177-1994 微波檢波、混頻二極管 空白詳細(xì)規(guī)范

Blank detail specification for microwave detectors and mixer diodes

42 GB/T 15178-1994 變?nèi)荻O管空白詳細(xì)規(guī)范

Blank detail specification for variable capacitance diodes

43 GB/T 15449-1995 管殼額定開(kāi)關(guān)用場(chǎng)效應(yīng)晶體管 空白詳細(xì)規(guī)范

Blank detail-specification for field-effect transistors for case-rated  

swatching application

44 GB/T 15450-1995 硅雙柵場(chǎng)效應(yīng)晶體管 空白詳細(xì)規(guī)范

Blank detail specification for silicon dual-gate field-effect transistors

45 GB/T 15529-1995 半導(dǎo)體發(fā)光數(shù)碼管空白詳細(xì)規(guī)范

Blank detail specification for LED numeric displays

46 GB/T 15649-1995 半導(dǎo)體激光二極管空白詳細(xì)規(guī)范

Blank detail specification for semiconductor laser diodes

47 GB/T 15651-1995 半導(dǎo)體器件 分立器件和集成電路 第5部分:光電子器件

Semiconductor devices--Discrete devices and integrated circuits--Part 5: Optoelectronic devices

48 GB/T 15655-1995 超扭曲向列型液晶顯示器件分規(guī)范

Sectional specification for super-twisted nematic liquid crystal display

devices 49 GB/T 15656-1995 超扭曲向列型液晶顯示器件 空白詳細(xì)規(guī)范

Blank detail specification of super-twisted nematic liquid crystal display

devices 50 GB/T 16468-1996 靜電感應(yīng)晶體管系列型譜

Series programmes for static induction transistors

51 GB/T 4023-1997 半導(dǎo)體器件分立器件和集成電路 第2部分: 整流二極管

Semiconductor devices--Discrete devices and integrated circuits--Part 2: Rectifier diodes

52 GB/T 6351-1998 半導(dǎo)體器件 分立器件 第2部分: 整流二極管 首篇 100A以下

環(huán)境或管殼額定整流二極管（包括雪崩整流二極管）空白詳細(xì)規(guī)范

Semiconductor devices Discrete devices Part 2: Rectifier diodes Section One-Blank detail specification for rectifier diodes（including avalanche recti-fier diodes）1， ambient and case-rated，up to 100A

53 GB/T 6352-1998 半導(dǎo)體器件 分立器件 第6部分: 閘流晶體管 首篇 100A以下

環(huán)境或管殼額定反向阻斷三極閘流晶體管空白詳細(xì)規(guī)范 Semiconductor devices Discrete devices Part 6: Thyristors Section One-Blank detail specification for reverse blocking

triode thyristors，ambient or case-rated，up to 100A

54 GB/T 6590-1998 半導(dǎo)體器件 分立器件 第6部分: 閘流晶體管 第二篇 100A以下

環(huán)境或管殼額定的雙向三極閘流晶體管空白詳細(xì)規(guī)范 Semiconductor devices Discrete devices Part 6: Thyristors Section Two-Blank detail specification for bidirectional triode

thyristors（triacs），ambient or case-rated，up to 100A

55 GB/T 6217-1998 半導(dǎo)體器件 分立器件 第7部分: 雙極型晶體管 首篇 高低頻放

大環(huán)境額定的雙極型晶體管空白詳細(xì)規(guī)范 Semiconductor Devices Discrete

devices Part  Bipolar transistors Section One-Blank detail specification

for ambient-rated bipolar transistors for low and high frequency

amplification 56 GB/T 7576-1998 半導(dǎo)體器件 分立器件 第7部分: 雙極型晶體管

第四篇 高頻放大管殼額定雙極型晶體管空白詳細(xì)規(guī)范 Semiconductor devices Discrete devices Part 7: Bipolar transistors Section Four-Blank detail specification for case-rated

bipolar transistors for high-frequency amplification

57 GB/T 6219-1998 半導(dǎo)體器件 分立器件 第8部分: 場(chǎng)效應(yīng)晶體管 首篇 1GHz、

5W以下的單柵場(chǎng)效應(yīng)晶體管 空白詳細(xì)規(guī)范 Semiconductor devices Discrete devices Part 8: Field-effect transistors Section One-Blank detail specification for

singe-gate field-effect transistors up to 5W and 1GHz

58 GB/T 17573-1998 半導(dǎo)體器件 分立器件和集成電路

第1部分: 總則 Semiconductor devices Discrete devices and integrated circuits